| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a following problem: in a conventional semiconductor laser device and a driving method thereof, it is difficult to reduce both the magnitude of a spontaneously emitted light of non-oscillating time of the laser and the magnitude of oscillation delay time of oscillating time, particularly in a semiconductor laser device in which the length of a resonator is lengthened in order to emit a high optical output power. Ž<P>SOLUTION: The driving method of the semiconductor laser device and the semiconductor laser device includes: a semiconductor laser 4 having an electrode 5 in which a current can be injected into a part of region of an active layer and an electrode 6 in which the current can be injected into the remaining other active regions; a laser driving circuit 2 to supply the current to the electrode 5; a laser driving circuit 3 to supply the current to the electrode 6; and a control circuit 1 to control the laser driving circuit 2, 3. When emitting an optical output power, the current injection to the electrode 5 is made to precede to the current injection to the electrode 6, when zeroing the optical output power, the current to the electrode 5 is reduced to be an equivalent threshold current or less, the current of the electrode 6 is reduced to be less than the equivalent threshold current. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
