MANUFACTURING METHOD OF FERROELECTRIC MEMORY ELEMENT

摘要

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an improved ferroelectric memory element by forming a ferroelectric film having an improved crystal orientation. Ž<P>SOLUTION: The manufacturing method of a ferroelectric memory element includes processes of: forming a first electrode 33a in an upper portion of a substrate; forming a titanium film 341 on the first electrode 33a; depositing a product generated by allowing a first organic metal gas to react with a first oxygen gas on the titanium film 341, forming a solid solution composed of the product and the titanium film 341 to form a first ferroelectric film 34a on the first electrode 33a; and forming a second electrode 35a at an upper portion of the first ferroelectric film 34a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž