发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To solve such a problem that, when a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear surface wire, thereby causing the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. <P>SOLUTION: A concave portion 100 is formed in advance in a region where a rear-surface wiring pad 4d and a rear-surface wire 4e are formed. The rear-surface wiring pad 4d and the rear-surface wire 4e are provided inside the concave portion 100. Thus, a flatness of the rear surface of the chip 1C is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad 4d and the rear-surface wire 4e, so that the reduction of the sucking force does not occur when the chip 1C is handled. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009302453(A) 申请公布日期 2009.12.24
申请号 JP20080157844 申请日期 2008.06.17
申请人 RENESAS TECHNOLOGY CORP 发明人 KAWASHITA MICHIHIRO;YOSHIMURA YASUHIRO;TANAKA TADAYOSHI;NAITO TAKAHIRO;AKAZAWA TAKASHI
分类号 H01L25/065;H01L21/3205;H01L23/12;H01L23/52;H01L25/07;H01L25/18 主分类号 H01L25/065
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