SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, DISPLAY, AND ELECTRONIC APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To prevent degradation of transistor characteristics and display characteristics by relaxing influence of light entering into a channel part in an optical resonator. Ž<P>SOLUTION: This semiconductor device includes: a gate electrode (first electrode) Trg formed on a glass substrate 40; a semiconductor layer 42 formed on the gate electrode Trg through a gate insulation film (first insulation film) 41; a heat-transfer layer 44 formed through a buffer oxide film (second insulation film) 43 corresponding to a channel region 42a in the semiconductor layer 42; a channel protection film 45 formed to surround the heat-transfer layer 44 on the channel region 42a; and a source electrode (second electrode) Trs and a drain electrode (third electrode) Trd formed on both end sides of the channel region 42a on the semiconductor layer 42. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž