| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a near-field light memory head capable of highly efficiently directing the light wave from a semiconductor laser element through a hyperfine opening to the recording medium. <P>SOLUTION: In the near-field light memory head 6, vertical resonator surface emission semiconductor lasers 8 are arrayed in a lattice form in a laser substrate structure 2, and a laser beam from each semiconductor layer 8 is made incident on the microlens 32 of a probe substrate structure 10. The laser beam is converged toward the opening 38 of a metal thin-film cycle structure 34 by the microlens 32. The metal thin-film lattice structure 34 is provided with a lattice segment 34-2 extended on a metal thin film 34-1, a surface plasmon-polariton is excited by the applied laser beam. A sharp and strong evanescent wave is emitted from the opening 38. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
