| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which a film having a high dielectric constant is formed at a high film deposition rate, and to provide a substrate processing apparatus. Ž<P>SOLUTION: When a thin film having a desired film thickness is formed on a substrate by repeating a cycle N-times, wherein the cycle includes a DER flow step of supplying a raw material gas formed by vaporizing DER into a processing chamber, a step of purging the raw material gas, a step of supplying NH<SB>3</SB>gas into the processing chamber, and a step of purging the NH<SB>3</SB>gas, in the step of supplying the raw material gas, the raw material gas is supplied to the substrate after being activated by a plasma, and in the step of supplying the NH<SB>3</SB>gas, the NH<SB>3</SB>gas is supplied to the substrate after being activated by a plasma. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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