发明名称 POSITIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THEREOF
摘要 <p>PURPOSE: A positive resist composition, and a method for forming a pattern by using the composition are provided to show a sufficient transparency in case of a light source of 157 nm and to improve sensitivity, resolution, coating property, line edge roughness, development defect and scum. CONSTITUTION: A positive resist composition comprises a resin having at least one or more repeating unit having the group of the formula Z, wherein X is -C(=O)-O- or -C(=O)-N(Ra)-; Ra is a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; L is a single bond, or an alkylene group, a cycloalkylene group, an arylene group, a group which the preceding groups are combined, or a divalent linker; R^1 to R^6 are independently a hydrogen atom, a halogen atom, or an organic group; but one or more of R^1 to R^6 is a fluorine atom, or an organic group containing at least one fluorine atom; and R is a hydrogen atom or an organic group.</p>
申请公布号 KR20090130838(A) 申请公布日期 2009.12.24
申请号 KR20090108795 申请日期 2009.11.11
申请人 FUJIFILM CORPORATION 发明人 MIZUTANI KAZUTOSHI;KANNA SHINICHI;SASAKI TOMOYA
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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