METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of fabricating a semiconductor device in which a plurality of silicide layers each having a low resistance value are formed adjacent to one another via insulating films and a deterioration in voltage endurance characteristics and the occurrence of short circuit among the plurality of silicide layers are suppressed. Ž<P>SOLUTION: The method of fabricating the semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via the insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into the plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž