METHOD OF FORMING SEMICONDUCTOR ELEMENT, AND METHOD OF MANUFACTURING MEMORY SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor element, and to provide a method of manufacturing a memory system.

SOLUTION: An object layer 430 for pattern formation is formed on a substrate 400; and a mask layer 432 is formed on the object layer 430 for pattern formation. A portion of the mask layer 432 is removed in a first region of the semiconductor element, the mask layer 432 being made to remain in a second region of the semiconductor element. A mold mask pattern 450 is formed on the object layer 430 for pattern formation in the first region and on the mask layer 432 in the second region. A spacer layer 460 is formed on the mold mask pattern 450 in the first region and in the second region. An etching process is performed to etch the spacer layer 460 so that spacers may remain at sidewalls of a pattern structure of the mold mask pattern 450, and to etch the mask layer 432 in the second region.

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