| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Schottky electrode for a gallium oxide single crystal substrate which has a superior Schottky property for the gallium oxide single crystal substrate and is obtained in an easy method. Ž<P>SOLUTION: The Schottky electrode for the gallium oxide single crystal substrate is manufactured by coating the gallium oxide single crystal substrate with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (S1) in a spin coating method, and vaporizing a solvent (S2). The gallium oxide single crystal substrate is coated with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) to which 4 to 6 wt.% of dimethyl sulfoxide is added to form a thin film, and then the conductivity is improved to form an electrode having a more excellent Schottky property. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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