发明名称 |
Method of manufacturing a CMOS image sensor |
摘要 |
In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.
|
申请公布号 |
US2009317933(A1) |
申请公布日期 |
2009.12.24 |
申请号 |
US20090457773 |
申请日期 |
2009.06.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK BYUNG-JUN;LEE TAE-HUN;SHIN SEUNG-HUN |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|