| 发明名称 |
Method for Forming Isolation Structures |
| 摘要 |
A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
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| 申请公布号 |
US2009317957(A1) |
申请公布日期 |
2009.12.24 |
| 申请号 |
US20090552352 |
申请日期 |
2009.09.02 |
| 申请人 |
HAMPP ROLAND;GUTMANN ALOIS;HAN JIN-PING;KWON O SUNG |
发明人 |
HAMPP ROLAND;GUTMANN ALOIS;HAN JIN-PING;KWON O SUNG |
| 分类号 |
H01L21/762;H01L21/336 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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