发明名称 Leistungshalbleitervorrichtung
摘要 A power semiconductor device in which transfer molding resin seals: a metallic circuit substrate; a power semiconductor element joined to a wiring pattern; and a side surface of a cylindrical external terminal communication section provided on the wiring pattern and to which an external terminal can be inserted and connected. The cylindrical external terminal communication section is substantially perpendicular to a surface on which the wiring pattern is formed. An outer surface of a metal plate of the metallic circuit substrate and a top portion of the cylindrical external terminal communication section are exposed from the transfer molding resin. The transfer molding resin is not present within the cylindrical external terminal communication section.
申请公布号 DE112008000229(T5) 申请公布日期 2009.12.24
申请号 DE20081100229T 申请日期 2008.01.18
申请人 MITSUBISHI ELECTRIC CORP. 发明人 OKA, SEIJI;USUI, OSAMU;NAKAYAMA, YASUSHI;OBIRAKI, YOSHIKO;OI, TAKESHI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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