发明名称 BIAS SENSING IN DRAM SENSE AMPLIFIER
摘要 <P>PROBLEM TO BE SOLVED: To improve refresh performance in a DRAM (Dynamic Random Access Memory) sense amplifier by providing bias sensing suitable for the DRAM sense amplifier. <P>SOLUTION: Voltage coupling/decoupling devices 134 and 144 are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices couple or decouple bias voltage from corresponding digit lines (lines 138 and 148 coupled to the sense amplifiers). By coupling and decoupling voltage from the digit lines, the time interval between refresh operations can be increased. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009301700(A) 申请公布日期 2009.12.24
申请号 JP20090186921 申请日期 2009.08.11
申请人 MICRON TECHNOLOGY INC 发明人 MCELROY DAVID J;CASPER STEPHEN L
分类号 G11C11/409;G11C11/4091;G11C7/06;G11C7/12;G11C11/4094 主分类号 G11C11/409
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