发明名称 CMOS solid state imaging device
摘要 <p>Each pixel of a pixel matrix portion includes a photo diode, a floating diffusion, a transfer transistor for transferring a storage charge of the photo diode to the floating diffusion in response to a transfer pulse, a reset transistor for resetting the floating diffusion in response to a reset pulse, and a reading circuit for reading a voltage of the floating diffusion to a column signal line in response to a row selection pulse. A timing generator repeats a counting of subframes, and switches a frame consisting of the subframes in designated number. A vertical scanning circuit controls whether or not the reset pulse, the transfer pulse, and the row selection pulse should be fed to respective rows of the pixel matrix portion every subframe, and controls timings of the reset pulse and the transfer pulse in each subframe.</p>
申请公布号 EP2136547(A2) 申请公布日期 2009.12.23
申请号 EP20090008098 申请日期 2009.06.19
申请人 YAMAHA CORPORATION 发明人 WAKAMORI, YASUO
分类号 H04N5/335;H01L27/146;H04N5/355;H04N5/369;H04N5/374;H04N5/376 主分类号 H04N5/335
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