发明名称 |
Thin film transistor, method of manufacturing the same, and flat panel display device having the same |
摘要 |
<p>A thin film transistor, a method of manufacturing the same, and a flat panel display device having the same use an oxide semiconductor as an active layer, wherein the thin film transistor includes: an oxide semiconductor layer formed on a substrate and having a channel region, a source region, and a drain region; a gate electrode insulated from the oxide semiconductor layer by a gate insulating layer; an ohmic contact layer formed on the source region and the drain region of the oxide semiconductor layer; and a source electrode and a drain electrode coupled to the source region and the drain region through the ohmic contact layer, the ohmic contact layer being formed of a metal having a lower work function lower than work functions of the source electrode and the drain electrode.</p> |
申请公布号 |
EP2136406(A1) |
申请公布日期 |
2009.12.23 |
申请号 |
EP20090251375 |
申请日期 |
2009.05.21 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
JEONG, JAE KYEONG;SHIN, HYUN SOO;MO, YEON GON |
分类号 |
H01L29/786;H01L29/45 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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