| 摘要 |
PURPOSE:To obtain a device with high reliability by interposing a metallic film working as a diffusion barrier for Cu, Si in alloy between an Al alloy metal of lower layer and a pure Al film of upper layer. CONSTITUTION:Electrode extraction layer 101-103 in thin film of Al-Si-Cu alloy 0.5-1mum thick are formed on a semiconductor substrate, which are covered with SiO2 film 11, and a window is provided on the layer 103. Next, a film 12 of Ti, Pt, W, Ta, Zr, Ni, Cr, Ti-W alloy, Ni-Cr alloy, etc. is laminated at 200-3000Angstrom , a pure Al 13 is fixed thereon, and a three-layer electrode wiring is formed. According to this constitution, Al alloy and Al are isolated securely through heat treatment after the wiring is formed and conductivity is also secured, an electromigration occurrence and a junction breakdown on the wiring side connected to the diffused layer is prevented by Al alloy, and a junction property with the connection is ensured by Al. A junction yield is sharply improved with high reliability. |
