发明名称 SEMICONDUCTOR RADIATION DETECTOR
摘要 PURPOSE:To obtain a useful information concerning the radiation quality by arranging ranges of radiation detecting elements, each of which is formed by providing opposing electrodes to a semiconductor substrate having a sensitivity to the radiation in the incident direction of the radiation, and analyzing the distribution of the output signals from respective detecting element regions. CONSTITUTION:Electrodes 2 (21, 22...) are arranged on one surface of a semiconductor substrate 1 having a sensitivity to a radiation, and electrodes 3 (31, 32...) opposing respectively to electrodes 2 (21, 22...) are arranged on the other surface thereof. Regions held between the above described electrodes and unit X-ray detecting regions, and they are arranged in series with respect to incident X-rays. As incident radiations such as X-rays generate in the substrate 1 electron hole pairs by photo-electric effect or Compton effect, they are attenuated, and these electron hole pairs are collected by electrodes nearest to the generated points.
申请公布号 JPS55144576(A) 申请公布日期 1980.11.11
申请号 JP19790052318 申请日期 1979.04.27
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 NARUSE YUUJIROU;SUGITA TOORU;KOBAYASHI TETSUJI
分类号 G01T1/24;G01N23/04;G01N23/207;H01L31/00;H01L31/09 主分类号 G01T1/24
代理机构 代理人
主权项
地址