| 摘要 |
<p>[Object] To provide a dry etching method by which generation of a notch in an insulating layer can be suppressed and highly-accurate microfabrication can be realized. [Solving Means] In a dry etching method according to the present invention, a substrate in which a semiconductor layer (21) is formed on an insulating layer (23) formed of a silicon oxide is prepared, a through-hole (25) is formed in the semiconductor layer (21), and a resin film (27) is formed on side walls of the through-hole (25) and a recessed portion (26) while forming the recessed portion (26) in the insulating layer (23) by etching an area in which the insulating layer (23) is exposed via the through-hole (25). By forming the resin film (27) on the side wall of the recessed portion (26), the side wall of the recessed portion (26) is protected from collision of ions in plasma and generation of a notch in the recessed-portion side wall is suppressed. Furthermore, by forming the resin film (27) on the side wall of the through-hole (25), the side wall of the through-hole (25) is protected from the collision of ions in plasma and a hole shape of the through-hole (25) is prevented from fluctuating.</p> |
