| 摘要 |
PURPOSE:To prevent a dielectirc material layer from crack, when coating the electrode arranged on a substrate with dielectric material layer, by employing specific relation between the temperature of the substrate and the adhering speed of the dielectric material layer while employing the dielectric layer containing silicon dioxide more than specific amount. CONSTITUTION:Conductive electrodes 2 are arranged with specific pattern on a glass substrate 1 and coated with dielectric material layer 3 then faced each other through gas discharge space 4. Here the dielectric material layer 3 is composed of more than 90wt% of silicon dioxide while the temperature (t) of the substrate is set in the range from 150 deg.C to the softening point of the substrate, then said temperature and the adhering speed R of the dielectric material layer are selected to satisfy the relation R<=17t-2,500. Consequently the crack isn't produced in the dielectric material layer film 3 during thermal processing for forming the discharge panel, resulting in considerable improvement of the quality. |
