Bipolar transistor and process for fabricating same.

摘要

Disclosed is a self-aligned process for providing an improved bipolar transistor structure.

The process includes the chemically etching of an intermediate insulating layer (10) to undercut another top layer (11) of a different insulating material in a self-aligned emitter process wherein the spacing of the emitter contact to the polysilicon base contact is reduced to a magnitude of approximately 0.2 to 0.3 micrometers. In addition, in the process an emitter plug (14) is formed to block the emitter region (12) from the heavy P+ ion dose implant of the extrinsic base (19).