The present disclosure includes devices and methods for operating phase change memory cells. One or more embodiments include applying a programming signal to a phase change material of a memory cell, and decreasing a magnitude of a trailing portion of the applied programming signal successively according to a number of particular decrements. The magnitude and the duration of the number of particular decrements correspond to particular programmed values.
申请公布号
WO2009120275(A3)
申请公布日期
2009.12.23
申请号
WO2009US01653
申请日期
2009.03.16
申请人
MICRON TECHNOLOGY, INC.;RAMANI, PRADEEP;PORTER, JOHN D.