发明名称 |
HIGH VOLTAGE GAN-BASED HETEROJUNCTION TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME |
摘要 |
<p>A semiconductor device includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A flash layer is disposed on the second active layer and source, gate and drain contacts are disposed on the flash layer.</p> |
申请公布号 |
EP2135285(A1) |
申请公布日期 |
2009.12.23 |
申请号 |
EP20080732543 |
申请日期 |
2008.03.20 |
申请人 |
VELOX SEMICONDUCTOR CORPORATION |
发明人 |
MURPHY, MICHAEL;POPHRISTIC, MILAN |
分类号 |
H01L29/778;H01L21/316;H01L21/338;H01L23/29;H01L23/31;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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