| 摘要 |
<p>Provided is a reflective mask blank for EUV lithography having a low-reflection layer which has a low reflectance in the range of wavelengths of EUV light and a light to be used for mask pattern inspection, in particular, is lowly reflective in the whole wavelength region for the light for mask pattern inspection (190-260 nm), and which has a high etching rate in etching with a chlorine-based gas. The reflective mask blank for EUV lithography comprises a substrate and, formed thereon in the following order, a reflection layer which reflects EUV light, an absorbent layer which absorbs EUV light, and a low-reflection layer which lowly reflects a light for mask pattern inspection (wavelengths, 190-260 nm). The reflective mask blank is characterized in that the low-reflection layer contains silicon (Si) and nitrogen (N) in a total content of 95 at.% or higher and has a silicon content of 5-80 at.% and a nitrogen content of 15-90 at.%.</p> |
