| 摘要 |
<p>The present invention provides a level shifter circuit capable of high frequency operations. The level shifter circuit utilizes a dynamic charge injection device, which diminishes a capacitive coupling effect between a gate and a drain of input NMOS devices, when the input signal switches from a high logic level to a low logic level. The dynamic charge injection device is incorporated at output nodes to provide initial thrust to the level shifter circuit, which triggers a positive regenerative feedback of cross-coupled pull up PMOS devices enabling a rapid transition and hence the high frequency operations.
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