发明名称 |
MEMORY ARCHITECTURE HAVING LOCAL COLUMN SELECT LINES |
摘要 |
A memory architecture for an array of memory cells having a plurality of sections of memory and a plurality of regions disposed between the plurality of sections of memory. Each section of memory having a plurality of memory cells arranged in rows and columns of memory and a plurality of sense amplifiers located in each of the plurality of regions. The sense amplifiers coupled to a respective column of memory. A plurality of column select lines are located in each of the plurality of regions with each column select line coupled to a group of column select switches associated with a section of memory to activate the respective column select switches. |
申请公布号 |
KR20090130414(A) |
申请公布日期 |
2009.12.23 |
申请号 |
KR20097024305 |
申请日期 |
2008.05.09 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BESSHO SHINJI;NASU TAKUMI;NAKANISHI TAKUYA;ITO KOICHIRO |
分类号 |
G11C7/12;G11C7/06;G11C7/18 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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