发明名称 MEMORY ARCHITECTURE HAVING LOCAL COLUMN SELECT LINES
摘要 A memory architecture for an array of memory cells having a plurality of sections of memory and a plurality of regions disposed between the plurality of sections of memory. Each section of memory having a plurality of memory cells arranged in rows and columns of memory and a plurality of sense amplifiers located in each of the plurality of regions. The sense amplifiers coupled to a respective column of memory. A plurality of column select lines are located in each of the plurality of regions with each column select line coupled to a group of column select switches associated with a section of memory to activate the respective column select switches.
申请公布号 KR20090130414(A) 申请公布日期 2009.12.23
申请号 KR20097024305 申请日期 2008.05.09
申请人 MICRON TECHNOLOGY, INC. 发明人 BESSHO SHINJI;NASU TAKUMI;NAKANISHI TAKUYA;ITO KOICHIRO
分类号 G11C7/12;G11C7/06;G11C7/18 主分类号 G11C7/12
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