| 摘要 |
PURPOSE:To obtain high in sensitivity to a long wavelength region, low in residual potential, and small in dark decay, by successively laminating an Se-As layer contg. As not below a specified proportion, an Se-Te layer contg. Te not below a specified proportion, and an Se layer on an aluminum support. CONSTITUTION:An Se-As layer contg. >=30wt% As, an Se-Te layer contg. >=20wt% Te, and an Se layer in regular order on an aluminum support to provide an electrophotographic receptor, thus permitting a superior receptor to be good in charging characteristics, high in sensitivity to light of wavelengths as high as about 800nm, small in residual potential, and small in dark decay to be obtained. |
