发明名称 |
SEMICONDUCTOR COMPONENT WITH FIELD PLATE STRUCTURE AND METHOD FOR PRODUCING THE SAME |
摘要 |
A transistor in which the electric field is reduced in critical areas using field plates, permitting the electric field to be more uniformly distributed along the component, is provided, wherein the electric field in the active region is smoothed and field peaks are reduced. The semiconductor component has a substrate with an active layer structure, a source contact and a drain contact located on said active layer structure. The source contact and the drain contact are mutually spaced and at least one part of a gate contact is provided on the active layer structure in the region between the source contact and the drain contact, a gate field plate being electrically connected to the gate contact. In addition, at least two separate field plates are placed directly on the active layer structure or directly on a passivation layer. |
申请公布号 |
EP2135286(A1) |
申请公布日期 |
2009.12.23 |
申请号 |
EP20080717012 |
申请日期 |
2008.02.21 |
申请人 |
FORSCHUNGSVERBUND BERLIN E.V. |
发明人 |
BAHAT-TREIDEL, ELDAT;SIDOROV, VICTOR;WUERFL, JOACHIM |
分类号 |
H01L29/778;H01L29/40;H01L29/423;H01L29/47;H01L29/66;H01L29/812 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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