ORGANIC THIN-FILM TRANSISTOR

摘要

Disclosed is a bottom-contact organic thin-film transistor which comprises, on a substrate, at least a gate electrode, an insulating layer, a source electrode, a drain electrode and an organic semiconductor layer.  At least one of the source electrode and the drain electrode has a multilayer structure wherein an oxide layer and a metal layer are laminated, and the metal layer is surface-modified with an organic thin-film layer.