发明名称 |
Semiconductor device and manufacturing method of the same |
摘要 |
An interlayer insulating film (14) covering a ferroelectric capacitor is formed and a contact hole (19) reaching a top electrode (11a) is formed in the interlayer insulating film (14). An Al wiring (17) connected to the top electrode (11a) via the contact hole (19) is formed on the interlayer insulating film (14). A planar shape of the contact hole (19) is an ellipse.
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申请公布号 |
US7635885(B2) |
申请公布日期 |
2009.12.22 |
申请号 |
US20060601807 |
申请日期 |
2006.11.20 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
NAGAI KOUICHI |
分类号 |
H01L31/113;H01L21/02;H01L21/8246;H01L27/105;H01L27/115 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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