| 摘要 |
In a first aspect, a semiconductor storage device, comprising: a metal line coupled to a gate of an access transistor, wherein the gate material is deposited substantially above the metal line. In a second aspect, a semiconductor storage device, comprising: a first port to write data to a storage element; and a second port to read a signal generated by the storage element; and a first metal line coupled to a gate of an access transistor coupled to the first port; and a second metal line coupled to a gate of an access transistor coupled to the second port; wherein, the gates of said access transistors are formed on a gate material deposited substantially above the metal of first and second metal lines.
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