发明名称 |
Semiconductor structures formed on substrates and methods of manufacturing the same |
摘要 |
Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.
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申请公布号 |
US7635637(B2) |
申请公布日期 |
2009.12.22 |
申请号 |
US20050189163 |
申请日期 |
2005.07.25 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
WANG QI;LI MINHUA;RICE JEFFREY H. |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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