发明名称 |
Methods for fabricating semiconductor devices |
摘要 |
Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first spacers on sidewalls of the first gate electrode; forming a second gate electrode functioning as a normal gate electrode; forming a source/drain region with a shallow junction by performing a first ion implantation process using at least one of the first spacers as a mask; forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; forming a source/drain region with a deep junction by performing a second ion implantation process using the second spacers as a mask.
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申请公布号 |
US7635898(B2) |
申请公布日期 |
2009.12.22 |
申请号 |
US20070764679 |
申请日期 |
2007.06.18 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM SEOK SU;CHOI CHEE HONG |
分类号 |
H01L23/62;H01L27/10;H01L21/28;H01L21/302;H01L21/336;H01L21/461;H01L29/423;H01L29/78 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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