Non-volatile semiconductor memory

摘要

A non-volatile semiconductor memory is disclosed, which comprises a plurality of memory cell arrays each having a number-of-rewrites storage region allocated to a portion of a corresponding cell array, and a number-of-rewrites write control circuit which stores the number of rewrites in cell transistors of the number-of-rewrites storage regions in non-selected memory cell arrays of the plurality of memory cell arrays by executing write of data to the cell transistors at a voltage lower than an ordinary write voltage so as to change a threshold value of the cell transistors in analog fashion according to an amount of electrons injected into floating gates of the cell transistors.