发明名称 |
Vertical nanotube field effect transistor |
摘要 |
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
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申请公布号 |
US7635856(B2) |
申请公布日期 |
2009.12.22 |
申请号 |
US20070835167 |
申请日期 |
2007.08.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
APPENZELLER JOERG;AVOURIS PHAEDON;CHAN KEVIN K.;COLLINS PHILIP G.;MARTEL RICHARD;WONG HON-SUM PHILIP |
分类号 |
H01L29/76;H01L29/06;H01L29/94;H01L51/00;H01L51/05;H01L51/30 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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