| 摘要 |
A method for manufacturing a semiconductor device is provided. The method includes forming a polysilicon layer on a semiconductor substrate, forming an anti-reflection coating on the polysilicon layer, forming a photoresist (PR) layer pattern on the anti-reflection coating, etching the anti-reflection coating using the PR layer pattern as a mask in capacitive coupled plasma (CCP) equipment using CF4, Ar, and O2, so as to cause a reaction by-product generated by etching the anti-reflect coating to be deposited on sidewalls of the PR layer pattern, thereby forming spacers, and etching the polysilicon layer using the PR layer pattern and the spacers as a mask.
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