发明名称 |
Well for CMOS imager and method of formation |
摘要 |
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
|
申请公布号 |
US7635604(B2) |
申请公布日期 |
2009.12.22 |
申请号 |
US20050105419 |
申请日期 |
2005.04.14 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
RHODES HOWARD E.;PATRICK INNA;MAURITZON RICHARD A. |
分类号 |
H01L21/00;H01L27/10;H01L27/146 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|