METHOD FOR MANUFACTURING OF LIGHT EMITTING ELEMENT, LIGHT EMITTING DIODE, AND SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing of a light emitting element capable of accurately and efficiently cutting a wafer having a group III-V compound semiconductor layer; a light emitting diode; and a semiconductor laser element.

SOLUTION: A wafer with an n-type semiconductor layer 17a and a p-type semiconductor layer 17b each formed of a group III-V compound semiconductor laminated on a surface 3 of a substrate 1 is cut along a cut-planned line. In this case, grooves 25 without reaching the substrate 1 are formed on the semiconductor layers 17a and 17b along the cut-planned line; a modified region 7 by multiphoton absorption is formed only on the substrate 1 by aligning a light-converging point P in the inside of the substrate 1 facing the grooves 25 and irradiating laser light L; a crack generated from the modified region 7 is grown in the thickness direction of the substrate 1 only by applying force to the substrate 1; and the semiconductor layers 17a and 17b present on the cut-planned ling are cut along with the substrate 1 along the cut-planned line.

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