| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce an error of an on-resistance ratio between main and sense DMOSs to improve current detection accuracy. <P>SOLUTION: Since a part 5a of an gate insulation film 5 enters in a main-side source electrode film 4, a drain current path 7 is lengthened, and the wiring resistance value (Ra+Rb) of the main-side electrode film 4 in the drain current path 7 is increased. Accordingly, the wiring resistance value (Ra+Rb) can be adjusted by adjusting the length of the part 5a. Accordingly the wiring resistance value Ra of a main VDMOS 2 and the wiring resistance value (Rc+Rd) of a sense VDMOS 3 can be set equal to each other, whereby the error of the on-resistance ratio between the main and sense DMOSs can be reduced to improve current detection accuracy. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
