| 摘要 |
PURPOSE:To form an insulating film for MIS element with excellent life span of break down, by a method wherein, when a silicon oxide film (SiO2) on an Si semiconductor substrate is nitrified utilizing NH3 gas to form a silicon oxinitride film (NO), the temperature of NH3 gas is specified. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 by dilution oxidiz ing process. Next an oxinitride film 3 is formed by nitrification at the tempera ture of 670-790 deg.C utilizing NH3. Later after depositing polycrystalline silicon by CVD process for phophorus doping, an MIS capacitor gating phosphorus doped polycrystalline Si 12 is formed by means of lithography and dryetching process. Through these procedures, a semiconductor device containing long life insulating film oxinitride may be formed by means of specifying the moder ate temperature range for nitrifying SiO2 utilizing NH3 to be 670-790 deg.c. |
