| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve such a problem that improvement of efficiency in a method for producing a semiconductor device having a conventional LDD (Lightly Doped Drain) structure is difficult. <P>SOLUTION: The method for producing a semiconductor device includes: a step of forming a first electrically conductive pattern 107 so as to overlap in a plane view with a part of a first semiconductor layer 51 on a display face side of the first semiconductor layer 51 arranged on a first substrate 41; a first implantation step of implanting an impurity into the first semiconductor layer 51 using the first conductive pattern as a mask; a reduction step of reducing a first superimposed region 113a that is a region where the first electrically conductive pattern 107 and the first semiconductor layer 51 overlap with each other in a plan view by removing a part of the electrically conductive pattern 107 after the first implantation step; and a second implantation step of implanting the impurity into the first semiconductor layer 51 using a gate electrode 57 as a mask after the reduction step. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
