| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing crystal silicon particles capable of stably single-crystallizing silicon particles at a high efficiency and producing single crystal particles at a low cost. <P>SOLUTION: In the method for producing crystal silicon particles, silicon particles 101 are heated at a temperature below or equal to their melting point in an ambient gas consisting of nitrogen gas or in an ambient gas containing nitrogen gas as a main component to form a silicon nitride film on the surfaces of the silicon particles 101. Subsequently, the silicon particles 101 are heated in an ambient gas consisting of oxygen gas or in an ambient gas consisting of oxygen gas and an inert gas to melt silicon at the inside of the silicon nitride film, and then lowered in temperature to be solidified and single-crystallized. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
