MOS-Leistungshalbleiteranordnung

摘要

Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors (2) and a gate structure (12) comprising a plurality of conductive strips (8) realised with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks (11) connected to a gate pad (30) and at least a connection layer (20) arranged in series to at least one of said conductive strip (8). Such gate structure (12) comprising at least a plurality of independent islands (10) formed on the upper surface (9) of the conductive strips (8) and suitably formed on the connection layers (20). Said islands (10) being realised with at least one second conductive material such as silicide.