发明名称 |
FORMATION OF SOLAR CELL-SELECTIVE EMITTER USING IMPLANT AND ANNEAL METHOD |
摘要 |
<p>A method of forming a solar cell, the method comprising: providing a semiconducting wafer having a pre-doped region; performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation, wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, and wherein the first and second ion implantations are performed independently of one another.</p> |
申请公布号 |
WO2009152378(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
WO2009US47109 |
申请日期 |
2009.06.11 |
申请人 |
SOLAR IMPLANT TECHNOLOGIES INC.;ADIBI, BABAK;MURRER, EDWARD, S. |
发明人 |
ADIBI, BABAK;MURRER, EDWARD, S. |
分类号 |
H01L31/0368;H01L31/0376 |
主分类号 |
H01L31/0368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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