发明名称 |
SUPER SELF-ALIGNED TRENCH MOSFET DEVICES, METHODS AND SYSTEMS |
摘要 |
<p>A manufacturing process and design structure for a super self-aligned trench power MOSFET. A plurality of super self-aligned trenches of different depths are formed into the body layer and epitaxial layers, preferably by using a multilayer stack of dielectric material etched to form spacers. Respective trenches contain gate conductors, body-contact conductors, and preferably a third trench containing a recessed field plate. This results in a MOSFET structure having high cell density and low gate charges and gate-drain charges.</p> |
申请公布号 |
WO2009151657(A1) |
申请公布日期 |
2009.12.17 |
申请号 |
WO2009US35073 |
申请日期 |
2009.02.25 |
申请人 |
MAXPOWER SEMICONDUCTOR INC.;DARWISH, MOHAMED, N.;ZENG, JUN |
发明人 |
DARWISH, MOHAMED, N.;ZENG, JUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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