LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS

摘要

In laser annealing by means of solid-state laser, a focal position in a minor axial direction of a rectangular beam is easily corrected depending on a variation in position of a laser irradiated region on a semiconductor film. A minor axial condenser lens (29) for focusing incident light in the minor axial direction and a projection lens (30) for projecting outgoing light from the condenser lens (29) onto the surface of the semiconductor film (3) are used to focus laser light (1) in the minor axial direction of the rectangular beam on the surface of the semiconductor film (3). A variation in vertical position on the laser irradiated region on the film (3) is detected by a position variation detector (31), and the minor axial condenser lens (29) is moved in the optical axial direction based on the detection value.