发明名称 PEROVSKITE-TYPE OXIDE, FERROELECTRIC FILM, FERROELECTRIC ELEMENT, AND LIQUID DISCHARGE APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a PZT-based perovskite-type oxide in which more than 1 mol% of substituent ion and 10 mol% or more of substitutent ion are added to an A site and a B site, respectively, and A site defects are few. <P>SOLUTION: The perovskite-type oxide is represented by the following formula (P): (Pb<SB>1-x+δ</SB>A<SB>x</SB>)(Zr<SB>y</SB>Ti<SB>1-y</SB>)<SB>1-z</SB>M<SB>z</SB>O<SB>w</SB>(P), wherein Pb and A each denote an A site element in which A is at least one element other than Pb; Zr, Ti, and M each denote a B site element in which M is at least one element selected from the group consisting of Nb, Ta, V, Sb, Mo, and W; the relations: 0.01<x≤0.4, 0<y≤0.7, 0.1≤z≤0.4;δ=0 and w=3 are satisfied as standard values, but these values may be shifted from reference values within a range in which the oxide can take a perovskite structure. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009293130(A) 申请公布日期 2009.12.17
申请号 JP20090195497 申请日期 2009.08.26
申请人 FUJIFILM CORP 发明人 SHINKAWA TAKAMI
分类号 C23C14/34;B41J2/045;B41J2/055;B41J2/135;B41J2/14;C01G25/00;H01L41/09;H01L41/18;H01L41/187;H01L41/316;H01L41/39 主分类号 C23C14/34
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