| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor laser device, capable of obtaining an excellent far field pattern by definitely forming a terracing horizontal plane between a resonator end face and a device isolation face, using a simple method. SOLUTION: The method for manufacturing a nitride semiconductor laser device includes a nitride semiconductor layer containing at least an active layer provided on a substrate, a pair of resonator end faces formed in the nitride semiconductor layer, and a protrusion section where a part of the substrate is protruded from the resonator end faces, wherein the step of forming the nitride semiconductor layer on the substrate, the first etching step of forming a first trench section by etching at least the nitride semiconductor layer, and the second etching step of forming the resonator end faces are included; and an internal wall of the first trench section and a part of the surface of the nitride semiconductor layer, adjacent to the first trench section are etched to form a second trench section in the second etching step, thereby forming an upper surface of the protrusion section is provided. COPYRIGHT: (C)2010,JPO&INPIT
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