| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily melting lumps or granules composed of silicon in a short time without enlarging equipment. SOLUTION: An apparatus for growing a silicon single crystal is equipped with: a furnace body 11 having a crucible 17, into which the lumps or granules 29 composed of silicon can be charged, in the inside thereof; a side heater 13 for melting the lumps or granules 29 by heating the crucible 17, which is arranged in the furnace body 11 so as to surround the crucible 17; and a sub-heater 23 for heating the lumps or granules 29 together with the side heater 13, which is arranged at an upper part of the crucible 17 in the furnace body 11. The method for melting the silicon raw material comprises charging the lumps or granules 29 composed of silicon into the crucible 17 and melting the lumps or granules 29 by heating the crucible 17 by the side heater 13. When the lumps or granules 29 are melted, the sub-heater 23 is arranged at an upper part of the crucible 17 so that the sub-heater 23 can heat the lumps or granules 29 together with the side heater 13. COPYRIGHT: (C)2010,JPO&INPIT
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