MAGNETORESISTANCE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistance element used for a magnetic field sensor or a reading head in a hard disk. SOLUTION: An element which can exhibit extraordinary magnetoresistance (EMR) effect includes an elongated channel (2) formed of silicon. A conductor (6) formed of densely doped silicon is connected to the channel along one side (5) of the channel to provide an electric shunt. A gate structure (12) including a gate electrode (13) is arranged on the channel. When a bias of appropriate polarity and a sufficient size is given to the gate electrode, an inversion layer is formed in the channel. COPYRIGHT: (C)2010,JPO&INPIT